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| Si1070X Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.099 at VGS = 4.5 V 0.140 at VGS = 2.5 V ID (A) 1.2a 1.0 Qg (Typ.) 3.5 FEATURES * Halogen-free Option Available * TrenchFET(R) Power MOSFET * 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS * Load Switch for Portable Devices SC-89 (6-LEADS) D 1 6 D Marking Code U G 3 4 S XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: SI1070X-T1-E3 (Lead (Pb)-free) Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free) D 2 5 D ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg Limit 30 12 1.2b, c 1b, c 6 9 4.01 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V A L = 0.1 mH TA = 25 C TA = 25 C TA = 70 C mJ A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 650 C/W. t5s Steady State Symbol RthJA Typical 440 540 Maximum 530 650 Unit C/W Document Number: 73893 S-81528-Rev. C, 30-Jun-08 www.vishay.com 1 Si1070X Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time ISM VSD trr Qrr ta tb IF = 3.8 A, dI/dt = 100 A/s IS = 1.2 A 0.8 19.4 18.43 16.4 3 6 1.2 29.5 27.5 ns A V nC VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 15 ID 1.0 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz VDS = 15 V, VGS = 5 V, ID = 1.2 A VDS = 15 V, VGS = 4.5 V, ID = 4.6 A VDS = 15 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.2 A VGS = 2.5 V, ID = 1.0 A VDS = 15 V, ID = 1.2 A 6 0.082 0.116 5 385 55 30 3.8 3.5 1.1 0.98 4.7 10 22 14 6 6.2 15 33 21 9 ns 8.3 4.1 nC pF 0.099 0.140 0.7 30 24.5 - 3.81 1.55 100 1 10 V mV/C V nA nA A A S Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73893 S-81528-Rev. C, 30-Jun-08 Si1070X Vishay Siliconix TYPICAL CHARACTERISTICS 6 VGS = 5 V thru 3 V 2.4 VGS = 2.5 V 4 I D - Drain Current (A) 1.8 TA = 25 C, unless otherwise noted 3.0 5 I D - Drain Current (A) 3 1.2 TC = 125 C 0.6 TC = 25 C TC = - 55 C 1.8 2.4 3.0 2 VGS = 2 V 1 VGS = 1.5 V 0 0.0 0.6 1.2 1.8 2.4 0.0 0.0 0.6 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 500 Transfer Characteristics curves vs. Temp 0.25 R DS(on) - On-Resistance () C - Capacitance (pF) 400 Ciss 0.20 VGS = 2.5 V VGS = 4.5 V 0.10 300 0.15 200 Coss 0.05 100 0.00 0 1 2 3 4 5 6 0 0 Crss 6 12 18 24 30 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 1.8 Capacitance VGS - Gate-to-Source Voltage (V) 4 ID = 1.2 A VDS = 15 V R DS(on) - On-Resistance 1.6 VGS = 4.5 V ID = 1.2 A 1.4 (Normalized) VGS = 2.5 V ID = 1 A 3 VGS = 24 V 2 1.2 1.0 1 0.8 0 0 1 2 3 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Qg - Gate Charge On-Resistance vs. Junction Temperature Document Number: 73893 S-81528-Rev. C, 30-Jun-08 www.vishay.com 3 Si1070X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 10 0.24 ID = 1.2 A R DS(on) - On-Resistance () I S - Source Current (A) 1 0.18 0.1 TJ = 150 C TJ = 25 C TA = 125 C 0.12 0.01 0.06 TA = 25 C 0.001 0 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.5 1.4 ID = 250 A 4.0 5.0 RDS(on) vs. VGS vs. Temperature 1.2 Power (W) - 25 0 25 50 75 100 125 150 VGS(th) (V) 3.0 1.0 2.0 0.8 1.0 0.6 - 50 0.0 0.01 0.1 1 10 Time (s) 100 1000 TJ - Temperature (C) Threshold Voltage 10 Limited by R DS(on)* 1 I D - Drain Current (A) 100 s 1 ms 10 ms 100 ms 1s 10 s 0.01 BVDSS Limited TA = 25 C Single Pulse 0.001 0.1 1 10 100 DC Single Pulse Power 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73893 S-81528-Rev. C, 30-Jun-08 Si1070X Vishay Siliconix TYPICAL CHARACTERISTICS 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 10-1 0.2 0.1 0.05 10-2 0.02 Notes: PDM t1 TA = 25 C, unless otherwise noted 10-3 Single Pulse 10-4 10-4 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73893. Document Number: 73893 S-81528-Rev. C, 30-Jun-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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